View TA2160FNG_4134223.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TA2160FNG
Toshiba Bipolar Integrated Circuit Silicon Monolithic
TA2160FNG
Low Consumption Current Stereo Headphone Amplifier (1.5/3 V use)
The TA2160FNG is low consumption current stereo headphone amplifier IC for headphone stereo. It is suitable for 1.5 V or 3 V headphone stereo.
Features
* Low consumption current Current value (f = 1 kHz, RL = 32 , Ta = 25C, typ.) * VCC = 1.3 V ICCQ = 1.6 mA (No signal) ICC = 4.6 mA (0.1 mW x 2 ch) ICC = 8.6 mA (0.5 mW x 2 ch) * VCC = 3 V ICCQ = 3.0 mA (No signal) ICC = 4.8 mA (0.1 mW x 2 ch) ICC = 8.8 mA (0.5 mW x 2 ch) * * Built-in ripple filter Preamplifier stage * Built-in input capacitor for reducing buzz noise * Input coupling condensor-less * Built-in preamplifier mute * Power amplifier stage * Built-in bass boost function with AGC * Built-in treble boost function * Built-in input capacitor for reducing buzz noise * GV = 25dB (typ.) * Built-in power amplifier mute * Operating supply voltage range (Ta = 25C) VCC (opr) = 0.95 to 4.5 V Weight: 0.17 g (typ.)
1
2004-05-11
TA2160FNG
Block Diagram
RF OUT 1.5 V set: OPEN 3 V set: ON VREF RL RL
OUTA
OUTC
OUTB
VCC
VREF
INB 30 29
INA 28
RF IN 27
VREF IN 26
RF OUT 25
BASE 24
LPF 23
BST NF 22
BST OUT 21
PW INC 20
AGC IN 19
OUTA 18
OUTC 17
OUTB
VCC 16
RF&REF BST
AGC DET PREB PREA PWA PWC PWB
BST SW MUTE SW 1 PRE OUTB 2 PRE NFB 3 PRE NFA 4 PRE OUTA 5 VREF 6 PRE GND 7 BST SW 8 PW INA 9 PW NFA 10 PW NFB 11 PW INB 12 PW MUTE ON OFF ON 13 PRE MUTE OFF 14 AGC DET 15 PW GND
VREF PRE OUTB PRE OUTA
ON VCC
OFF PW INA PW INB
VCC
2
2004-05-11
TA2160FNG
Terminal Explanation (terminal voltage: typical terminal voltage at no signal with test
circuit, VCC = 1.3 V, Ta = 25C)
Terminal No.
1 4 17 18 19 2
Name
PRE OUTB PRE OUTA OUTB OUTC OUTA PRE NFB
Function
Internal Circuit
Termin al Voltage (V)
0.44 4
Input of preamplifier
Output of power amplifier
0.56
NF of preamplifier 3 PRE NFA VREF 29 INA Input of preamplifier 30 INB 3 29 500 10 pF
0.7
0.73
5
VREF
Reference circuit 27 5
0.73
27
VREF IN
Input of reference circuit
0.73
6
PRE GND Boost on/off switch
0
BST on: H level or open BST off: L level Refer to application note 3 (2) 7 BST SW This switch is the control terminal of the bass boost function. When it is synchronized with treble boost function, the external connection with the PW NF terminal is required. Refer to application circuit. Muting switch of power amplifier 12 PW MUTE PW MUTE OFF: H level or open PW MUTE ON: L level Refer to application note 3 (2) 7 20 k
3
2004-05-11
TA2160FNG
Terminal No. Name
Function Internal Circuit
Termin al Voltage (V)
8
PW INA Input of power amplifier (This terminal also has function of ADD amplifier input.)
To ADD amplifier 22 k VREF 22 k
0.73
11
PW INB
8
10 pF
19 9 PW NFA NF of power amplifier 10 PW NFB 2 k To BST SW 9 0.72
30 k VREF
Muting switch of preamplifier 13 PRE MUTE PRE MUTE ON: H level PRE MUTE OFF: L level Refer to application note 3 (2) 47 k 13
14
AGC DET
Smoothing terminal of boost AGC circuit
14
15 16
PW GND VCC BASE
Power GND for power drive stage Base biasing terminal of transistor for ripple filter Output of ripple filter 28 VCC
0 1.3 RF OUT
25
0.6
16
25
26 1.24
26
RF OUT
Ripple filter circuit supplies internal circuit except power drive stage with power source 46.5 k
28
RF IN
Ripple filter terminal
1.24
4
2004-05-11
TA2160FNG
Terminal No. Name
Function Internal Circuit
Termin al Voltage (V)
VREF The input level to the boost amplifier is controlled by the input level of this terminal. Input impedance: 22 k (typ.) 22 k Input of boost AGC circuit 20 AGC IN
OUTC
20
22 k
VREF
21 21 PW INC Input of center amplifier
1 pF 0.73
30 k 2 k VREF
VREF 22 BST OUT Output of boost amplifier 10 k
To the center amplifier 22 k 22
0.73
VREF 100 k 2 k 23 BST NF NF of boost amplifier 23
0.73
VREF
22 k Input of power amplifier 24 LPF Low pass filter terminal of bass boost 22 k 0.73 24
VREF
5
2004-05-11
TA2160FNG
Application Note
1. Preamplifier Stage
Output DC voltage of preamplifier Output DC voltage of preamplifier is determined by external resistors R1 and R2 as shown in Figure 1.
V = 28.6 mV R1 VREF R2
Figure 1 Output DC Voltage of Preamplifier
VO (PRE) = VREF - V x (R2/R1 + 1) * VREF = 0.73 V (typ.) VREF is changed when resistance is connected between RF OUT terminal and VREF IN terminal
(Refer to application note 3 (1)).
* V is an offset voltage which is designed to 28.6 mV. It is as follows in case that the DC voltage is calculated by the constant of a test circuit. VO (PRE) = 0.73 V - 28.6 mV (200 k/22 k + 1) = 0.44 V Output DC voltage of preamplifier should be fixed about VCC/2, because preamplifier get a enough dynamic range.
2. Power Amplifier Stage
(1) Input of power amplifier Each input signal should be applied through a capacitor. In case that DC current or DC voltage is applied to each amplifier, the internal circuit has unbalance and the each amplifier doesn't operate normally. It is advised that input signal refer to VREF voltage, in order to reduce a pop noise or low frequency leak. Bass boost function (a) System This IC has the bass boost function in power amplifier stage. After this system adds the low frequency ingredient of side amplifier, it is applied into the center amplifier. And the bass boost level is controlled by the variable impedance circuit (Figure 2) * Flow of the bass boost signal Variable impedance circuit Boost amplifier Center amplifier * Flow of the bass boost level Output of center amplifier AGC DET (level detection) Variable impedance circuit operation The system of treble boost function is realized by frequency characteristic adjustment of the side amplifier.
(2)
6
2004-05-11
TA2160FNG
8 19 RL 11 Ra 24 C1 Ra ATT Rd
BST PW B
PW A
17 C4
22 C3
21
14 C6
AGC DET
20
R1
Rc Flow of the bass boost level C2 C5 Rb
23
Figure 2 Bass Boost System
(b) AGC circuit The AGC circuit of bass boost function is realized by the variable impedance circuit. The AGC DET circuit detects the low frequency level of center amplifier. When this level becomes high, the variable impedance circuit operates, and this circuit attenuates the input level of center amplifier. The AGC DET circuit is the current input, so that the output voltage of ADD amplifier is changed into the current ingredient by resistor Rb and capacitor C5 which are shown in Figure 2. And it is smoothed and detected by DET circuit (pin 14). And the direct current should not be applied to the AGC IN circuit, because, as for the circuit, the sensitivity setup is high. Moreover, the AGC signal level is decreased in case that the resistor R5 is connected with the capacitor C5 in series. And the AGC point can be changed. But the center amplifier is clipped in the low frequency in case that the resistor R5 is larger. Bass boost The signal flow of bass boost function is as follows, refer to Figure 3. LPF (internal resistors 2R1 and external capacitor C1) ATT (variable impedance circuit) HPF (BST amplifier) BPF (LPF: internal resistor R4 and external capacitor C3, HPF: external capacitor C4 and internal resistor R5) Center amplifier The center amplifier signal becomes the reverse phase, because the phase of audio frequency range is reversed with two LPFs.
(c)
7
2004-05-11
RL
Flow of the bass boost signal
PW C
18
TA2160FNG
19 RL
PW C
PW A
C1
C3
24 11 2R1 22 k
ATT
BST
R4 = 22 k 22 R3 = 2 k
21 C4
R5
2R1
22 k
8
22 k
18
R2 = 100 k
23 C2
G1 () LPF
A1
G2 () HPF
G3 () BPF
A2
Figure 3 Block Diagram of Bass Boost
The transfer function of bass boost is as follows from Figure 3. G () = G1 ()*A1*G2 ()*G3 ()*A2 The bass boost effect is changed by external resistor or external capacitor. The transfer function and cutoff frequency are as follows. i Transfer function of LPF G1 () = 1/(1 + jC1*R1) fL = 1/2C1*R1 ii Transfer function of BPF G3 () = jC4*R5/[1 + j (R4*C3 + R5*C3 + C4*R4) - 2R4*C3*R5*C4]
fO = 1/2 R4 C3 R5 C4 iii HPF gain and ct of frequency G2 () = 1 + R2/(R3 + 1/jC2) fHC = 1/(2R3*C2)
30 HPF 20
Response (dB)
10
A Ra Ca Rb Cb
Total characteristic
0
fL LPF
-10 BPF -20 fO
-30 3
10
100
400
Frequency
f (Hz)
Figure 4 BPF
Graph 1 Characteristic of Bass Boost
8
2004-05-11
TA2160FNG
iv fO and fL The fL and fO should be set up out of the audio frequency range. In case that the fO and fL is inside of audio frequency range and AGC circuit operates, the voltage gain decrease. HPF The fHC should be made 1/2 or less frequency as compared with the fL and fO. The phase difference is large near the fHC, so that the bass boost level runs short. And the HPF gain of middle or high frequency range should be set to 10dB or more.
v
(3)
Treble boost function This function is realized by using the PW NF terminal. For details, please refer to application note.
3. Total
(1) Changeover of power amplifier output DC voltage at 3 V set. The output DC voltage of the power amplifier is raised by the resistance connected between the RF OUT terminal and the VREF IN terminal. In case of 3 V set, the dynamic range spreads.
VREF, PW OUT, ICCQ - R
2.5
VREF (V)
1.5 PW OUT 1
6
Reference voltage
4 0.5 ICCQ
2
0 10 k
20 k
50 k
100 k
200 k
500 k
0 1M
Resistance (PIN 26 - PIN 27) R
()
Figure 5
(2)
Adjutment of output DC voltage
Switch (a) Switch terminal The current flows through each terminal, in case that these terminals are connected with H level independently, evevn though the IC off mode. It is necessary to connect an external pull-down resistor with each terminal in case that IC is turned on due to external noise etc. The sensitivity of each switch is set up highly. (b) Pop noise It is advised to connect R and C with each switch, to reduce the pop noise in switchover (see Fig.1). It is better that the constants are R = 100 k ,C = 1 F. As for the constants, select the optimum one depending on each a set carefully.
VCC R C
Figure 6 Pop noise 9 2004-05-11
Quiescent supply current
VREF
8
ICCQ
2
10
(mA)
VCC = 3 V
12
TA2160FNG
(c) Sensitivity voltage of each switch (Ta = 25C)
BST SW, PW MUTE
5 5 4.5 V 4 4.5 V
PRE MUTE
V7, V12 (V)
V13 (V)
H
4
3
3
Terminal voltage
Terminal voltage
H 2
2
1 0.8 V 0.3 V 0 0 1 2 L 3 4 5
1 0.8 V 0.3 V 0 0 1 2 L 3 4 5
Supply voltage
VCC
(V)
Supply voltage
VCC
(V)
BST SW (V7) H level/open L level BST ON BST OFF
PW MUTE (V12) Power mute off Power mute on H level L level
PRE MUTE (V13) Pre mute on Pre mute off
(3)
(4)
Ripple filter It is necessary to connect a low saturation transistor (2SA1362 etc.) for ripple filter, because this IC doesn't have transistor for ripple filter. Care should be taken to stabilize the ripple filter circuit, because the ripple filter circuit supplies internal circuit except power drive stage with power source. Capacitor Small temperature coefficient and excellent frequency characteristic is needed by capacitor below. * Oscillation preventing capacitors for power amplifier output * Capacitor between VREF and GND * Capacitor between VCC and GND * Capacitor between RF OUT and GND
Maximum Ratings (Ta = 25C)
Characteristics Supply voltage Output current Power dissipation Operating temperature Storage temperature Symbol VCC IO (peak) PD (Note) Topr Tstg Rating 4.5 100 550 -2575 -55150 Unit V mA mW C C
Note: Derated above Ta = 25C in proportion of 4.4 mW/C.
10
2004-05-11
TA2160FNG
Electrical Characteristics
(unless otherwise specified, VCC = 1.3 V, Ta = 25C, f = 1 kHz, SW1: a, SW3: a, SW4: a, SW5: OPEN Preamplifier stage: Rg = 2.2 k, RL = 10 k, SW6: a Power amplifier stage: Rg = 600 , RL = 32 , SW2: a)
Characteristics Symbol ICCQ1 ICCQ2 Quiescent supply current ICCQ3 ICCQ4 ICC1 Power supply current during drive ICC2 Open loop voltage gain Closed loop voltage gain Maximum output voltage Preamp. stage Total harmonic distortion Equivalent input noise voltage Cross talk Ripple Rejection ratio Preamplifier muting attenuation Voltage gain Channel balance GVO GVC Vom1 THD1 Vni CT1 RR1 ATT1 GV1 CB Po1 Output power Power amp. stage Po2 Total harmonic distortion Output noise voltage Cross talk Ripple rejection ratio Power amplifier muting attenuation Voltage gain THD2 Vno CT2 RR2 ATT2 Test Circuit Test Condition PRE + PW PRE: OFF, SW4: b VCC = 3 V, PRE + PW, SW5: ON VCC = 3 V, PRE: OFF, SW4: b, SW5: ON PRE + PW, 0.1 mW/32 x 2 ch VCC = 3 V, PRE + PW, 0.1 mW/32 x 2 ch, SW5: ON Vo = -22dBV, NF resistor (240 ): short Vo = -22dBV THD = 1% VCC = 1 V, Vo = -22dBV Rg = 2.2 k, DIN/AUDIO NAB (GV = 35 dB,f = 1 kHz), SW6: b Vo = -22dBV fr = 100 Hz, Vr = -32dBV BPF = 100 Hz Vo = -22dBV, SW4: a b Vo = -22dBV Vo = -22dBV VCC = 1.5 V, THD = 10% VCC = 3 V, THD = 10%, SW5: ON Po = 1 mW Rg = 600 , DIN/AUDIO, SW2: b Vo = -22dBV VCC = 1 V, fr = 100 Hz, Vr = -32dBV, BPF = 100 Hz Vo = -22dBV, SW3: a b f = 40 Hz, Vin = -64dBV, SW1: b, MONI: C-AMP - GND f = 40 Hz, Vin = -47dBV, SW1: b, MONI: C-AMP - GND f = 40 Hz, THD = 1%, SW1: b, MONI: C-AMP - GND f = 40 Hz, Vo = -32dBV, SW1: b a VCC = 1 V, IRF = 20 mA Min 65 160 23 -1.5 3 8 34 Typ. 1.6 1.3 3.0 2.7 4.6 4.8 80 35 250 0.1 1.5 60 70 84 25 0 6 12 0.1 30 43 80 80 Max 3.0 2.4 5.5 5.0 0.3 2.7 27 +1.5 0.5 60 mW mA mA Unit

dB dB mVrms % Vrms dB dB dB dB dB
% Vrms dB dB dB
GV2
45
48.5
52
dB
Boost stage
Voltage gain
GV3
31
34.5
38
dB
Maximum output voltage
Vom2

0.9
270

mVrms
Muting attenuation Ripple filter output voltage
ATT3 VRF OUT
58 0.93
dB V
11
2004-05-11
TA2160FNG
Characteristics Symbol Test Circuit Test Condition VCC = 1 V, IRF = 20 mA fr = 100 Hz, Vr = -32dBV BPF = 100 Hz Min Typ. Max 0.3 0.3 0.3 Unit
Ripple filter ripple rejection ration Preamplifier on voltage Preamplifier off current Power amplifier on current Power amplifier off voltage Boost switch on current Boost switch off voltage
RR3 V13 I13 I12 V12 I7 V7

35 0 5
42
dB V A A V A V
VCC = 0.95 V
5 0 5 0
12
2004-05-11
TA2160FNG
Test Circuit
4.7 F
Rg = 600
0.33 F
b 1000 pF 2.2 k VREF 30 INB 29 INA 28 RF IN SW5 4.7 F
180 k 10 F 0.22 F 4.7 F 2SA 1362-Y
32 0.1 F 0.33 F 0.1 F 220 k 4.7
32 0.1 F 4.7 0.1 F 4.7
1000 pF 2.2 k
27 VREF IN
2.2 F
26 RF OUT
25 BASE
24 LPF
23 BST NF
22 BST OUT
21 PW INC
20 AGC IN
19 OUTA
18 OUTC
17 OUTB
16 VCC
TA2160FNG
PRE OUTB 1
PRE NFB 2
PRE NFA 3
PRE OUTA 4
VREF 5 22 F
PRE GND 6
BST SW 7
PW INA 8 1 F SW2a (b) 600
PW NFA 9
PW NFB 10
PW INB 11 SW2b (b) 600 1 F
PW MUTE 12 SW3 (a)
PRE MUTE 13 SW4 (b)
AGC DET 14 4.7 F
PW GND 15
200 k 33 F 0.022 F 1 F
200 k 33 F
SW1 (b) VCC
(a)
22 k 22 k
0.022 F 1 F
(a) Rg = 600
(a) Rg = 600
(b)
(a)
12 k 240
12 k 240
10 k
PRE OUTB
VREF
10 k
PRE OUTA
VREF
VREF
VCC
13
2004-05-11
22 F
a2
SW6 a1
RF OUT VREF
OUTB
OUTC
OUTA
VCC
TA2160FNG
Application Note 1 (1.5 V set)
RF OUT VREF 0.33 F 0.22 F 1000 pF VREF INB 30 29 INA 28 1000 pF 4.7 F 2.2 F 10 F 4.7 F OUTA 32 RL 0.33 F 0.1 F 220 k OUTC 32 RL OUTB VCC 22 F OUTB 17 VCC 16 14 PRE MUTE AGC DET 4.7 F 15 PW GND
2SA 1362-Y BASE 25 24
4.7 0.1F 4.7 0.1F 4.7 0.1 F
RF IN 27
VREF IN 26
RF OUT
LPF 23
BST NF 22
BST OUT 21
PW INC 20
AGC IN 19
OUTA 18
OUTC
RF&REF BST
AGC DET PREB PREA PWA PWC PWB
BST SW MUTE SW 1 PRE OUTB 240 33 F 200 k 0.022 F 1 F 12 k 2 PRE NFB 22 k 22 k 3 PRE NFA 240 33 F 0.022 F 1 F 12 k 4 PRE OUTA 200 k 5 VREF 22 F 6 PRE GND 100 k 1 F 7 BST SW 8 1.6 k PW INA 9 1.6 k 0.012 F PW NFA 10 0.012 F PW NFB 11 PW INB 12 1 F PW MUTE 100 k 13
VCC RADIO IN
VREF
1 F
20 k
1 F
20 k 2SC1815
2SC1815
VREF
VCC
14
2004-05-11
TA2160FNG
Application Note 2 (3 V Set)
RF OUT VREF 0.33 F 0.22 F 4.7 F 1000 pF VREF INB 30 29 INA 28 1000 pF 4.7 F 10 F 180 k 2.2 F OUTA 32 RL 0.33 F 0.1 F 1 M OUTC 32 RL OUTB VCC 22 F OUTB 17 VCC 16 14 PRE MUTE AGC DET 4.7 F 15 PW GND
2SA 1362-Y BASE 25 24
4.7 0.1F 4.7 0.1F 4.7 0.1 F
RF IN 27
VREF IN 26
RF OUT
LPF 23
BST NF 22
BST OUT 21
PW INC 20
AGC IN 19
OUTA 18
OUTC
RF&REF BST
AGC DET PREB PREA PWA PWC PWB
BST SW MUTE SW 1 PRE OUTB 240 33 F 200 k 0.022 F 1 F 12 k 2 PRE NFB 22 k 22 k 3 PRE NFA 240 33 F 0.022 F 1 F 12 k 4 PRE OUTA 200 k 5 VREF 22 F 6 PRE GND 100 k 1 F 7 BST SW 8 1.6 k PW INA 9 1.6 k 0.012 F PW NFA 10 0.012 F PW NFB 11 PW INB 12 1 F PW MUTE 100 k 13
VCC RADIO IN
VREF
1 F
20 k
1 F
20 k 2SC1815
2SC1815
VREF
VCC
15
2004-05-11
TA2160FNG
Package Dimensions
Weight: 0.17 g (typ.)
16
2004-05-11
TA2160FNG
About solderability, following conditions were confirmed
* Solderability
(1) Use of Sn-63Pb solder Bath * solder bath temperature = 230C * dipping time = 5 seconds * the number of times = once * use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath * solder bath temperature = 245C * dipping time = 5 seconds * the number of times = once * use of R-type flux
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EBA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
17
2004-05-11

▲Up To Search▲

Price & Availability of TA2160FNG

	To Download TA2160FNG Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .